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june 2010 doc id 17610 rev 1 1/13 13 STP80NF70 n-channel 68 v, 0.0082 ? , 98 a, to-220 stripfet? ii power mosfet features exceptional dv /dt capability 100% avalanche tested application switching applications description the STP80NF70 is a n-channel power mosfet realized with stmicroelectronics unique stripfet? process. it has specifically been designed to minimize input capacitance and gate charge. the device is therefore suitable in advanced high-efficiency switching applications. figure 1. internal schematic diagram type v dss r ds(on) max i d STP80NF70 68 v < 0.0098 ? 98 a 1 2 3 to-220 3# $4!"or ' 3 table 1. device summary order code marking package packaging STP80NF70 80nf70 to-220 tube www.st.com
contents STP80NF70 2/13 doc id 17610 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STP80NF70 electrical ratings doc id 17610 rev 1 3/13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 68 v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 c 98 a i d drain current (continuous) at t c =100 c 68 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 392 a p tot total dissipation at t c = 25 c 190 w derating factor 1.27 w/c dv/dt (2) 2. i sd 80 a, di/dt 300 a/s, v dd v (br)dss , t j t jmax. peak diode recovery voltage slope 13 v/ns e as (3) 3. starting t j = 25 o c, i d = 40 a, v dd = 34 v. single pulse avalanche energy 700 mj t stg storage temperature -55 to 175 c t j operating junction temperature table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.79 c/w r thj-amb thermal resistance juncti on-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose (1) 1. 1.6 mm from case for 10 sec. 300 c
electrical characteristics STP80NF70 4/13 doc id 17610 rev 1 2 electrical characteristics (t case =25c unless otherwise specified). table 4. on/off states symbol parameter test cond itions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 68 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating @125 c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 23 4v r ds(on) static drain-source on resistance v gs = 10 v, i d = 40 a 0.0082 0.0098 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration=300s, duty cycle 1.5%. forward transconductance v ds = 15 v, i d = 40 a -60- s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25 v, f = 1 mhz, v gs = 0 - 2550 550 175 - pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 34 v, i d = 80 a v gs =10 v - 75 17 30 - nc nc nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 34 v, i d = 40 a, r g =4.7 ?, v gs =10 v figure 13 on page 9 - 17 60 90 75 - ns ns ns ns
STP80NF70 electrical characteristics doc id 17610 rev 1 5/13 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 98 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 392 a v sd (2) 2. pulsed: pulse duration=300s, duty cycle 1.5% forward on voltage i sd = 80 a, v gs = 0 -1.5v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 80 a, di/dt = 100 a/s, v dd = 25 v, t j = 150 c figure 15 on page 9 - 70 160 4.7 ns nc a
electrical characteristics STP80NF70 6/13 doc id 17610 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics i d 0.1 10 v d s (v) (a) 1 0.1 1 10 100 oper a tion in thi s a re a i s limited b y m a x r d s (on) 100 s 1m s 10m s am009 3 5v 2 i d 0 10 v d s (v) (a) 5 0 50 100 200 150 250 15 5v 6v 7v 8 v v g s =10v am009 3 6v1 i d 5 v g s (v) (a) 0 50 100 200 150 250 v d s =10v 2 3 4 6 7 8 9 am009 3 7v1
STP80NF70 electrical characteristics doc id 17610 rev 1 7/13 figure 6. normalized bv dss vs temperature figure 7. static drain-source on resistance figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature v br(d ss ) -50 50 t j (c) (norm) 0 100 0. 8 0.9 1.0 1.1 1.2 v g s =0 i d =250 a am00957v1 r d s (on) 0 i d (a) (m ? ) 20 7 7.5 8 9 8 .5 9.5 40 60 8 0 am00951v1 v g s 0 q g (nc) (v) 20 0 2 4 8 6 10 40 60 8 0 12 v dd = 3 4v i d = 8 0a am00952v1 c(pf) 0 q g (nc) 10 0 1000 2000 4000 3 000 5000 20 3 0 40 50 60 ci ss co ss cr ss t j =25c f=1mhz am0095 3 v1 v g s (th) -50 50 t j (c) (norm) 0 100 0.6 0.7 0. 8 0.9 1.0 v d s =v g s i d =250 a am00954v1 r d s (on) -50 50 t j (c) (norm) 0 100 0.2 0.6 1.0 1.4 1. 8 v g s =10v i d =40a am00955v1
electrical characteristics STP80NF70 8/13 doc id 17610 rev 1 figure 12. source-drain diode forward characteristics v s d 0 40 i s d (a) (v) 20 60 0. 3 0.5 0.7 0.9 1.1 t j =-55c 25c 8 0 175c am00956v1
STP80NF70 test circuits doc id 17610 rev 1 9/13 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform
package mechanical data STP80NF70 10/13 doc id 17610 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
STP80NF70 package mechanical data doc id 17610 rev 1 11/13 to-220 type a mechanical data dim mm min typ max a 4.40 4.60 b 0.61 0. 88 b 1 1.14 1.70 c0.4 8 0.70 d 15.25 15.75 d1 1.27 e10 10.40 e 2.40 2.70 e1 4. 9 5 5.15 f1.2 3 1. 3 2 h1 6.20 6.60 j1 2.40 2.72 l1 3 14 l1 3 .50 3 . 93 l20 16.40 l 3 02 8 . 9 0 ? p 3 .75 3 . 8 5 q 2.65 2. 9 5 0015988_rev_s
revision history STP80NF70 12/13 doc id 17610 rev 1 5 revision history table 8. document revision history date revision changes 11-jun-2010 1 first release.
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